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BGY-717

BGY-717
  • 商品詳情

Application:

Applied to the polishing process of SiC wafers of third-generation semiconductor materials, SiC material has super-hard properties, and conventional silicon oxide polishing slurry has the problem of slow polishing efficiency. This product has a good performance in the polishing of silicon carbide on the Si surface. It has an efficient removal rate and has fewer defects on the surface of the SiC after polishing. At the same time, good surface quality can be obtained when polishing C-surface of SiC, so as to ensure that the polished workpiece has a higher polishing efficiency and yield, and improve the competitiveness of customers' products.


Technical parameter:

Chemical compositionContent
Particle size80-120 nm
PH value2-3
Solid content5-8%
ColorPurplish red
Packing5KG/pail 20KG/pail








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